Investigation, analysis and comparison of current-voltage characteristics for Au/Ni/GaN Schottky structure using I-V-T simulation

Data publikacji: 18 paź 2019

Zakres stron: 496 - 502

Otrzymano: 05 sty 2019

Przyjęty: 25 kwi 2019

DOI: https://doi.org/10.2478/msp-2019-0041

Słowa kluczowe

Schottky diode, Au/Ni/n-GaN, temperature effects, I-V characteristics, Cheung and Chattopadhyay method, SILVACO-TCAD

© 2019 A. Sadoun et al., published by Sciendo

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.