Investigation, analysis and comparison of current-voltage characteristics for Au/Ni/GaN Schottky structure using I-V-T simulation

Online veröffentlicht: 18. Okt. 2019

Seitenbereich: 496 - 502

Eingereicht: 05. Jan. 2019

Akzeptiert: 25. Apr. 2019

DOI: https://doi.org/10.2478/msp-2019-0041

Schlüsselwörter

Schottky diode, Au/Ni/n-GaN, temperature effects, I-V characteristics, Cheung and Chattopadhyay method, SILVACO-TCAD

© 2019 A. Sadoun et al., published by Sciendo

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.