Investigation, analysis and comparison of current-voltage characteristics for Au/Ni/GaN Schottky structure using I-V-T simulation

Published Online: Oct 18, 2019

Page range: 496 - 502

Received: Jan 05, 2019

Accepted: Apr 25, 2019

DOI: https://doi.org/10.2478/msp-2019-0041

Keywords

Schottky diode, Au/Ni/n-GaN, temperature effects, I-V characteristics, Cheung and Chattopadhyay method, SILVACO-TCAD

© 2019 A. Sadoun et al., published by Sciendo

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