Investigation, analysis and comparison of current-voltage characteristics for Au/Ni/GaN Schottky structure using I-V-T simulation

Publié en ligne: 18 oct. 2019

Pages: 496 - 502

Reçu: 05 janv. 2019

Accepté: 25 avr. 2019

DOI: https://doi.org/10.2478/msp-2019-0041

Mots clés

Schottky diode, Au/Ni/n-GaN, temperature effects, I-V characteristics, Cheung and Chattopadhyay method, SILVACO-TCAD

© 2019 A. Sadoun et al., published by Sciendo

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