Investigation, analysis and comparison of current-voltage characteristics for Au/Ni/GaN Schottky structure using I-V-T simulation
, , , , oraz
18 paź 2019
O artykule
Data publikacji: 18 paź 2019
Zakres stron: 496 - 502
Otrzymano: 05 sty 2019
Przyjęty: 25 kwi 2019
DOI: https://doi.org/10.2478/msp-2019-0041
Słowa kluczowe
© 2019 A. Sadoun et al., published by Sciendo
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.
Sadoun, A.
Laboratoire de Micro-Electronique Appliquée, Université Djillali Liables de Sidi Bel AbbesSidi Bel Abbes, Algeria
Mansouri, S.
Laboratoire de Micro-Electronique Appliquée, Université Djillali Liables de Sidi Bel AbbesSidi Bel Abbes, Algeria
Chellali, M.
Laboratoire de Micro-Electronique Appliquée, Université Djillali Liables de Sidi Bel AbbesSidi Bel Abbes, Algeria
Lakhdar, N.
University of El Oued, Fac. Technology, Department of electrical engineeringEl Oued, Algeria
Hima, A.
University of El Oued, Fac. Technology, Department of electrical engineeringEl Oued, Algeria
Benamara, Z.
Laboratoire de Micro-Electronique Appliquée, Université Djillali Liables de Sidi Bel AbbesSidi Bel Abbes, Algeria