<abstract xmlns="http://www.w3.org/1999/xhtml">In this work, we have presented a theoretical study of Au/Ni/GaN Schottky diode based on current-voltage (I-V) measurement for temperature range of 120 K to 400 K. The electrical parameters of Au/Ni/GaN, such as barrier height (Φb), ideality factor and series resistance have been calculated employing the conventional current-voltage (I-V), Cheung and Chattopadhyay method. Also, the variation of Gaussian distribution (P (Φb)) as a function of barrier height (Φb) has been studied. Therefore, the modified 
<inline-formula><alternatives><inline-graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="graphic/j_msp-2019-0041_eq_001.png"></inline-graphic><math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mrow><mo>(</mo><mrow><mrow><mo>(</mo><mrow><mi>ln</mi><mo>⁡</mo><mrow><mo>(</mo><mrow><mfrac><mrow><msub><mtext>I</mtext><mn>0</mn></msub></mrow><mrow><msup><mtext>T</mtext><mn>2</mn></msup></mrow></mfrac></mrow><mo>)</mo></mrow><mo>−</mo><mrow><mo>(</mo><mrow><mfrac><mrow><msup><mtext>q</mtext><mn>2</mn></msup><msubsup><mi>σ</mi><mrow><mtext>s</mtext><mn>0</mn></mrow><mn>2</mn></msubsup></mrow><mrow><mn>2</mn><msup><mrow><mtext>kT</mtext></mrow><mn>2</mn></msup></mrow></mfrac></mrow><mo>)</mo></mrow><mo>=</mo><mi>ln</mi><mo>⁡</mo><mrow><mo>(</mo><mrow><mtext>AA</mtext><mo>*</mo></mrow><mo>)</mo></mrow><mo>−</mo><mfrac><mrow><mtext>q</mtext><msub><mo>∅</mo><mrow><mi>B</mi><mn>0</mn></mrow></msub></mrow><mrow><mtext>kT</mtext></mrow></mfrac></mrow><mo>)</mo></mrow><mtext>vs</mtext><mo>.</mo><mrow><mo>(</mo><mrow><mfrac><mn>1</mn><mrow><mtext>kT</mtext></mrow></mfrac></mrow><mo>)</mo></mrow></mrow><mo>)</mo></mrow></math><tex-math>( {( {\ln \left( {{{{\rm{I}}_0 } \over {{\rm{T}}^2 }}} \right) - \left( {{{{\rm{q}}^2 \sigma _{{\rm{s}}0}^2 } \over {2{\rm{kT}}^2 }}} \right) = \ln ( {{\rm{AA}}^*} ) - {{{\rm{q}}\emptyset_{{\rm B}0} } \over {{\rm{kT}}}}} ){\rm{vs}}.( {{1 \over {{\rm{kT}}}}} )} )</tex-math></alternatives></inline-formula>
 relation has been extracted from (I-V) characteristics, where the values of ΦB0 and 
<inline-formula><alternatives><inline-graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="graphic/j_msp-2019-0041_eq_002.png"></inline-graphic><math xmlns:mml="http://www.w3.org/1998/Math/MathML"><msubsup><mtext>A</mtext><mrow><mtext>Simul</mtext></mrow><mo>*</mo></msubsup></math><tex-math>{\rm{A}}_{{\rm{Simul}}}^*</tex-math></alternatives></inline-formula>
 have been found in different temperature ranges. The obtained results have been compared to the existing experimental data and a good agreement was found.</abstract>

In this work, we have presented a theoretical study of Au/Ni/GaN Schottky diode based on current-voltage (I-V) measurement for temperature range of 120 K to 400 K. The electrical parameters of Au/Ni/GaN, such as barrier height (Φb), ideality factor and series resistance have been calculated employing the conventional current-voltage (I-V), Cheung and Chattopadhyay method. Also, the variation of Gaussian distribution (P (Φb)) as a function of barrier height (Φb) has been studied. Therefore, the modified 
((ln⁡(I0T2)−(q2σs022kT2)=ln⁡(AA*)−q∅B0kT)vs.(1kT))( {( {\ln \left( {{{{\rm{I}}_0 } \over {{\rm{T}}^2 }}} \right) - \left( {{{{\rm{q}}^2 \sigma _{{\rm{s}}0}^2 } \over {2{\rm{kT}}^2 }}} \right) = \ln ( {{\rm{AA}}^*} ) - {{{\rm{q}}\emptyset_{{\rm B}0} } \over {{\rm{kT}}}}} ){\rm{vs}}.( {{1 \over {{\rm{kT}}}}} )} )
 relation has been extracted from (I-V) characteristics, where the values of ΦB0 and 
ASimul*{\rm{A}}_{{\rm{Simul}}}^*
 have been found in different temperature ranges. The obtained results have been compared to the existing experimental data and a good agreement was found.

Investigation, analysis and comparison of current-voltage characteristics for Au/Ni/GaN Schottky structure using I-V-T simulation

Laboratoire de Micro-Electronique Appliquée

Université Djillali Liables de Sidi Bel Abbes

Fac. Technology, Department of electrical engineering

Materials Science-Poland

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

In this work, we have presented a theoretical study of Au/Ni/GaN Schottky diode based on current-voltage (I-V) measurement for temperature range of 120 K to...

Investigation, analysis and comparison of current-voltage characteristics for Au/Ni/GaN Schottky structure using I-V-T simulation

Publicado en línea: 18 oct 2019

Páginas: 496 - 502

Recibido: 05 ene 2019

Aceptado: 25 abr 2019

DOI: https://doi.org/10.2478/msp-2019-0041

Palabras clave
Schottky diode, Au/Ni/n-GaN, temperature effects, I-V characteristics, Cheung and Chattopadhyay method, SILVACO-TCAD

© 2019 A. Sadoun et al., published by Sciendo

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

Investigation, analysis and comparison of current-voltage characteristics for Au/Ni/GaN Schottky structure using I-V-T simulation

Publicado en línea: 18 oct 2019

Páginas: 496 - 502

Recibido: 05 ene 2019

Aceptado: 25 abr 2019

DOI: https://doi.org/10.2478/msp-2019-0041

Palabras claveSchottky diode, Au/Ni/n-GaN, temperature effects, I-V characteristics, Cheung and Chattopadhyay method, SILVACO-TCAD

© 2019 A. Sadoun et al., published by Sciendo

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

Palabras clave
Schottky diode, Au/Ni/n-GaN, temperature effects, I-V characteristics, Cheung and Chattopadhyay method, SILVACO-TCAD