Investigation, analysis and comparison of current-voltage characteristics for Au/Ni/GaN Schottky structure using I-V-T simulation

Pubblicato online: 18 ott 2019

Pagine: 496 - 502

Ricevuto: 05 gen 2019

Accettato: 25 apr 2019

DOI: https://doi.org/10.2478/msp-2019-0041

Parole chiave

Schottky diode, Au/Ni/n-GaN, temperature effects, I-V characteristics, Cheung and Chattopadhyay method, SILVACO-TCAD

© 2019 A. Sadoun et al., published by Sciendo

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.