Investigation, analysis and comparison of current-voltage characteristics for Au/Ni/GaN Schottky structure using I-V-T simulation
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18 ott 2019
INFORMAZIONI SU QUESTO ARTICOLO
Pubblicato online: 18 ott 2019
Pagine: 496 - 502
Ricevuto: 05 gen 2019
Accettato: 25 apr 2019
DOI: https://doi.org/10.2478/msp-2019-0041
Parole chiave
© 2019 A. Sadoun et al., published by Sciendo
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.
Sadoun, A.
Laboratoire de Micro-Electronique Appliquée, Université Djillali Liables de Sidi Bel AbbesSidi Bel Abbes, Algeria
Mansouri, S.
Laboratoire de Micro-Electronique Appliquée, Université Djillali Liables de Sidi Bel AbbesSidi Bel Abbes, Algeria
Chellali, M.
Laboratoire de Micro-Electronique Appliquée, Université Djillali Liables de Sidi Bel AbbesSidi Bel Abbes, Algeria
Lakhdar, N.
University of El Oued, Fac. Technology, Department of electrical engineeringEl Oued, Algeria
Hima, A.
University of El Oued, Fac. Technology, Department of electrical engineeringEl Oued, Algeria
Benamara, Z.
Laboratoire de Micro-Electronique Appliquée, Université Djillali Liables de Sidi Bel AbbesSidi Bel Abbes, Algeria