Investigation, analysis and comparison of current-voltage characteristics for Au/Ni/GaN Schottky structure using I-V-T simulation
, , , , y
18 oct 2019
Acerca de este artículo
Publicado en línea: 18 oct 2019
Páginas: 496 - 502
Recibido: 05 ene 2019
Aceptado: 25 abr 2019
DOI: https://doi.org/10.2478/msp-2019-0041
Palabras clave
© 2019 A. Sadoun et al., published by Sciendo
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.
Sadoun, A.
Laboratoire de Micro-Electronique Appliquée, Université Djillali Liables de Sidi Bel AbbesSidi Bel Abbes, Algeria
Mansouri, S.
Laboratoire de Micro-Electronique Appliquée, Université Djillali Liables de Sidi Bel AbbesSidi Bel Abbes, Algeria
Chellali, M.
Laboratoire de Micro-Electronique Appliquée, Université Djillali Liables de Sidi Bel AbbesSidi Bel Abbes, Algeria
Lakhdar, N.
University of El Oued, Fac. Technology, Department of electrical engineeringEl Oued, Algeria
Hima, A.
University of El Oued, Fac. Technology, Department of electrical engineeringEl Oued, Algeria
Benamara, Z.
Laboratoire de Micro-Electronique Appliquée, Université Djillali Liables de Sidi Bel AbbesSidi Bel Abbes, Algeria