Open Access

Physical properties of ZnTe semiconductor thin films prepared by high vacuum resistive system

M. Abbas

M. Abbas

  • Department of Physics, COMSATS Institute of Information TechnologyIslamabad, Pakistan
  • Ripha International UniversityIslamabad, Pakistan
Search for this author on
Sciendo|Google Scholar
Abbas, M.
, 
N. A. Shah

N. A. Shah

Department of Physics, COMSATS Institute of Information TechnologyIslamabad, Pakistan
Search for this author on
Sciendo|Google Scholar
Shah, N. A.
, 
K. Jehangir

K. Jehangir

Pakistan Council of Renewable Energy TechnologiesIslamabad, Pakistan
Search for this author on
Sciendo|Google Scholar
Jehangir, K.
, 
M. Fareed

M. Fareed

Pakistan Council of Renewable Energy TechnologiesIslamabad, Pakistan
Search for this author on
Sciendo|Google Scholar
Fareed, M.
 and 
A. Zaidi

A. Zaidi

Pakistan Council of Renewable Energy TechnologiesIslamabad, Pakistan
Search for this author on
Sciendo|Google Scholar
Zaidi, A.
  
Nov 02, 2018
Physical properties of ZnTe semiconductor thin films prepared by high vacuum resistive system's Cover Image
About this article
Previous Article
Next Article
Cite
Download Cover
Published Online: Nov 02, 2018
Page range: 364 - 369
Received: Sep 28, 2016
Accepted: Mar 22, 2018
DOI: https://doi.org/10.1515/msp-2018-0036
Keywords
© 2018 M. Abbas et al., published by Sciendo
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.
Language:
English
Publication timeframe:
4 times per year
Journal Subjects:
Materials Sciences, Materials Sciences, other, Nanomaterials, Functional and Smart Materials, Materials Characterization and Properties
Journal RSS Feed