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(a) schematic diagram of DC magnetron sputtering with supported discharge, (b) electrical circuit diagram of the supported discharge.Voltage-current characteristics in diode mode and triode mode at different filament bias currents.Variation of target current with target voltage at a constant filament bias current of 1.0 A for different pressures.Variation of thickness/rate of deposition on target power for the films deposited in diode and supported discharge modes, for dS−T = 4 cm.EDS spectra for the Ti thin films deposited at (a) 3 Pa and (b) 0.7 Pa.XRD patterns of Ti thin films deposited at a pressure of (a) 3 Pa, (b) 0.7 Pa at different target powers.SEM images of Ti thin films deposited in diode mode at the target power of (a) 60 W, (b) 80 W, (c) 100 W and (d) 120 W.Ti thin films deposited in triode mode at the target power of (a) 60 W, (b) 80 W, (c) 100 W and (d) 120 W.AFM images of Ti films deposited in supported discharge system at the target power of (a) 60W, (b) 80 W, (c) 100 W and (d) 120 W.Variation of electrical resistivity with target power of Ti thin films deposited in diode and triode mode.