Acceso abierto

Effect of target power on the physical properties of Ti thin films prepared by DC magnetron sputtering with supported discharge

A. Kavitha
A. Kavitha
, 
R. Kannan
R. Kannan
 y 
S. Rajashabala
S. Rajashabala
   | 24 feb 2017
Materials Science-Poland's Cover Image
Acerca de este artículo
Artículo anterior
Artículo siguiente
Cite
Publicado en línea: 24 feb 2017
Páginas: 173 - 180
Recibido: 05 jul 2016
Aceptado: 05 ene 2017
DOI: https://doi.org/10.1515/msp-2017-0022
Palabras clave
© 2017 A. Kavitha, R. Kannan, S. Rajashabala
This article is distributed under the terms of the Creative Commons Attribution Non-Commercial License, which permits unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited.

(a) schematic diagram of DC magnetron sputtering with supported discharge, (b) electrical circuit diagram of the supported discharge.
(a) schematic diagram of DC magnetron sputtering with supported discharge, (b) electrical circuit diagram of the supported discharge.

Voltage-current characteristics in diode mode and triode mode at different filament bias currents.
Voltage-current characteristics in diode mode and triode mode at different filament bias currents.

Variation of target current with target voltage at a constant filament bias current of 1.0 A for different pressures.
Variation of target current with target voltage at a constant filament bias current of 1.0 A for different pressures.

Variation of thickness/rate of deposition on target power for the films deposited in diode and supported discharge modes, for dS−T = 4 cm.
Variation of thickness/rate of deposition on target power for the films deposited in diode and supported discharge modes, for dS−T = 4 cm.

EDS spectra for the Ti thin films deposited at (a) 3 Pa and (b) 0.7 Pa.
EDS spectra for the Ti thin films deposited at (a) 3 Pa and (b) 0.7 Pa.

XRD patterns of Ti thin films deposited at a pressure of (a) 3 Pa, (b) 0.7 Pa at different target powers.
XRD patterns of Ti thin films deposited at a pressure of (a) 3 Pa, (b) 0.7 Pa at different target powers.

SEM images of Ti thin films deposited in diode mode at the target power of (a) 60 W, (b) 80 W, (c) 100 W and (d) 120 W.
SEM images of Ti thin films deposited in diode mode at the target power of (a) 60 W, (b) 80 W, (c) 100 W and (d) 120 W.

Ti thin films deposited in triode mode at the target power of (a) 60 W, (b) 80 W, (c) 100 W and (d) 120 W.
Ti thin films deposited in triode mode at the target power of (a) 60 W, (b) 80 W, (c) 100 W and (d) 120 W.

AFM images of Ti films deposited in supported discharge system at the target power of (a) 60W, (b) 80 W, (c) 100 W and (d) 120 W.
AFM images of Ti films deposited in supported discharge system at the target power of (a) 60W, (b) 80 W, (c) 100 W and (d) 120 W.

Variation of electrical resistivity with target power of Ti thin films deposited in diode and triode mode.
Variation of electrical resistivity with target power of Ti thin films deposited in diode and triode mode.

Qualitative analysis of crystallite size.

Working pressure [Pa]Target power [W]Grain size [nm]Relative intensity [%]Surface roughness [nm]
8064367
0.7100656212
1208010015
801282
31001394
12020125
eISSN:
2083-134X
Idioma:
Inglés
Calendario de la edición:
4 veces al año
Temas de la revista:
Materials Sciences, other, Nanomaterials, Functional and Smart Materials, Materials Characterization and Properties
RSS Feed de revista