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Materials Science-Poland
Volume 35 (2017): Numero 1 (March 2017)
Accesso libero
Effect of target power on the physical properties of Ti thin films prepared by DC magnetron sputtering with supported discharge
A. Kavitha
A. Kavitha
,
R. Kannan
R. Kannan
e
S. Rajashabala
S. Rajashabala
| 24 feb 2017
Materials Science-Poland
Volume 35 (2017): Numero 1 (March 2017)
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Pubblicato online:
24 feb 2017
Pagine:
173 - 180
Ricevuto:
05 lug 2016
Accettato:
05 gen 2017
DOI:
https://doi.org/10.1515/msp-2017-0022
Parole chiave
Ti thin films
,
supported discharge/triode mode
,
DC magnetron sputtering
,
target power
© 2017 A. Kavitha, R. Kannan, S. Rajashabala
This article is distributed under the terms of the Creative Commons Attribution Non-Commercial License, which permits unrestricted non-commercial use, distribution, and reproduction in any medium, provided the original work is properly cited.
(a) schematic diagram of DC magnetron sputtering with supported discharge, (b) electrical circuit diagram of the supported discharge.
Voltage-current characteristics in diode mode and triode mode at different filament bias currents.
Variation of target current with target voltage at a constant filament bias current of 1.0 A for different pressures.
Variation of thickness/rate of deposition on target power for the films deposited in diode and supported discharge modes, for dS−T = 4 cm.
EDS spectra for the Ti thin films deposited at (a) 3 Pa and (b) 0.7 Pa.
XRD patterns of Ti thin films deposited at a pressure of (a) 3 Pa, (b) 0.7 Pa at different target powers.
SEM images of Ti thin films deposited in diode mode at the target power of (a) 60 W, (b) 80 W, (c) 100 W and (d) 120 W.
Ti thin films deposited in triode mode at the target power of (a) 60 W, (b) 80 W, (c) 100 W and (d) 120 W.
AFM images of Ti films deposited in supported discharge system at the target power of (a) 60W, (b) 80 W, (c) 100 W and (d) 120 W.
Variation of electrical resistivity with target power of Ti thin films deposited in diode and triode mode.
Qualitative analysis of crystallite size.
Working pressure [Pa]
Target power [W]
Grain size [nm]
Relative intensity [%]
Surface roughness [nm]
80
64
36
7
0.7
100
65
62
12
120
80
100
15
80
12
8
2
3
100
13
9
4
120
20
12
5