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Germanium Gradient Optimization for High-Speed Silicon Germanium Hetero-Junction Bipolar Transistors

Abdelkader Khadir

Abdelkader Khadir

  • Laboratory of metallic and semiconducting materials, University of BiskraBiskra, Algeria
  • Materials Science and Informatics Laboratory, University of DjelfaDjelfa, Algeria
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Khadir, Abdelkader
, 
Nouredine Sengouga

Nouredine Sengouga

Laboratory of metallic and semiconducting materials, University of BiskraBiskra, Algeria
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Sengouga, Nouredine
 and 
Mohamed Kamel Abdelhafidi

Mohamed Kamel Abdelhafidi

  • Laboratory of metallic and semiconducting materials, University of BiskraBiskra, Algeria
  • Materials Science and Informatics Laboratory, University of DjelfaDjelfa, Algeria
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Abdelhafidi, Mohamed Kamel
  
Jan 21, 2020
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Published Online: Jan 21, 2020
Page range: 22 - 32
Received: Sep 29, 2019
Accepted: Nov 27, 2019
DOI: https://doi.org/10.2478/awutp-2019-0002
Keywords
© 2019 Abdelkader Khadir et al., published by Sciendo
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.
Language:
English
Publication timeframe:
1 times per year
Journal Subjects:
Materials Sciences, Modeling and Simulations, Physics, Theoretical and Mathematical Physics, Condensed Matter Physics, Medical Physics
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