Preparation and microstructural characterization of Si(100) Ce1−x GdxO2−δ thin films prepared by pulsed laser deposition technique

Data publikacji: 19 gru 2014

Zakres stron: 541 - 546

DOI: https://doi.org/10.2478/s13536-014-0246-5

Słowa kluczowe

cerium oxide, dislocation densities, gadolinium doped cerium oxide, microstructure, pulsed laser deposition, thin films

© 2014 Wroclaw University of Technology

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.