Preparation and microstructural characterization of Si(100) Ce1−x GdxO2−δ thin films prepared by pulsed laser deposition technique

Publicado en línea: 19 dic 2014

Páginas: 541 - 546

DOI: https://doi.org/10.2478/s13536-014-0246-5

Palabras clave

cerium oxide, dislocation densities, gadolinium doped cerium oxide, microstructure, pulsed laser deposition, thin films

© 2014 Wroclaw University of Technology

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