<abstract xmlns="http://www.w3.org/1999/xhtml">

<p>The conditions for stoichiometric thin film deposition by reactive magnetron sputtering include the existence of a given ratio between the flux of the sputtered metallic atoms and the flux of the reactive gas molecules on the surface of the substrate. To meet this condition, a relationship based on the Berg model is formulated between the partial pressure of the reactive gas, the target coverage, and the sputtering current density. Given that the target coverage can be estimated online from the sputtering voltage, it is possible to create a control structure where the reactive gas partial pressure is controlled to obtain stoichiometric thin film deposition. Simulation results are presented based on the dynamic model of the sputtering process.</p>
</abstract>

The conditions for stoichiometric thin film deposition by reactive magnetron sputtering include the existence of a given ratio between the flux of the sputtered metallic atoms and the flux of the reactive gas molecules on the surface of the substrate. To meet this condition, a relationship based on the Berg model is formulated between the partial pressure of the reactive gas, the target coverage, and the sputtering current density. Given that the target coverage can be estimated online from the sputtering voltage, it is possible to create a control structure where the reactive gas partial pressure is controlled to obtain stoichiometric thin film deposition. Simulation results are presented based on the dynamic model of the sputtering process.

Reactive Magnetron Sputtering Control Based on an Analytical Condition of Stoichiometry

John von Neumann Faculty, Óbuda University

Department of Electrical Engineering, Faculty of Technical and Human Sciences

Sapientia-Hungarian University of Transylvania

Acta Universitatis Sapientiae, Electrical and Mechanical Engineering

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

The conditions for stoichiometric thin film deposition by reactive magnetron sputtering include the existence of a given ratio between the flux of the...

Reactive Magnetron Sputtering Control Based on an Analytical Condition of Stoichiometry

Data publikacji: 25 gru 2023

Zakres stron: 74 - 85

Otrzymano: 15 cze 2023

DOI: https://doi.org/10.2478/auseme-2023-0006

Słowa kluczowe
Reactive magnetron sputtering, Berg model, state estimation, stoichiometry control

© 2023 Róbert Rossi Madarász et al., published by Sciendo

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Reactive Magnetron Sputtering Control Based on an Analytical Condition of Stoichiometry

Data publikacji: 25 gru 2023

Zakres stron: 74 - 85

Otrzymano: 15 cze 2023

DOI: https://doi.org/10.2478/auseme-2023-0006

Słowa kluczoweReactive magnetron sputtering, Berg model, state estimation, stoichiometry control

© 2023 Róbert Rossi Madarász et al., published by Sciendo

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Słowa kluczowe
Reactive magnetron sputtering, Berg model, state estimation, stoichiometry control