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Titanium nitride coatings synthesized by IPD method with eliminated current oscillations

Rafał Chodun

Rafał Chodun

Faculty of Materials Science and Engineering, Warsaw University of TechnologyWarsaw, Poland
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Chodun, Rafał
, 
Katarzyna Nowakowska-Langier

Katarzyna Nowakowska-Langier

National Centre for Nuclear Research (NCBJ)Otwock-Swierk, Poland
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Nowakowska-Langier, Katarzyna
 oraz 
Krzysztof Zdunek

Krzysztof Zdunek

  • Faculty of Materials Science and Engineering, Warsaw University of TechnologyWarsaw, Poland
  • National Centre for Nuclear Research (NCBJ)Otwock-Swierk, Poland
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Zdunek, Krzysztof
  
08 wrz 2016
Titanium nitride coatings synthesized by IPD method with eliminated current oscillations's Cover Image
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Kategoria artykułu: Research Article
Data publikacji: 08 wrz 2016
Zakres stron: 523 - 528
Otrzymano: 01 wrz 2015
Przyjęty: 31 maj 2016
DOI: https://doi.org/10.1515/msp-2016-0074
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© 2016 Rafał Chodun et al., published by Sciendo
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Fig. 1

Schematic diagram of the IPD device equipped with diodes bank.
Schematic diagram of the IPD device equipped with diodes bank.

Fig. 2

Current waveforms measured in the plasma accelerator electric circuit equipped with diodes bank (lower graph) and without the diodes bank (upper graph).
Current waveforms measured in the plasma accelerator electric circuit equipped with diodes bank (lower graph) and without the diodes bank (upper graph).

Fig. 3

SEM images presenting structures of TiN coatings deposited by processes with diodes bank connected to accelerator circuit (B) and without it (A).
SEM images presenting structures of TiN coatings deposited by processes with diodes bank connected to accelerator circuit (B) and without it (A).

Fig. 4

X-ray diffraction patterns for the films obtained in the standard version of apparatus (A) and in apparatus equipped with diodes bank (B).
X-ray diffraction patterns for the films obtained in the standard version of apparatus (A) and in apparatus equipped with diodes bank (B).

Fig. 5

The indicator of the edge blunting (VBC) as a function of machining time for three types of inserts.
The indicator of the edge blunting (VBC) as a function of machining time for three types of inserts.
Język:
Angielski
Częstotliwość wydawania:
4 razy w roku
Dziedziny czasopisma:
Nauka o materiałach, Nauka o materiałach, inne, Nanomateriały, Funkcjonalne i inteligentne materiały, Charakterystyka i właściwości materiałów
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