Accès libre

Titanium nitride coatings synthesized by IPD method with eliminated current oscillations

Rafał Chodun

Rafał Chodun

Faculty of Materials Science and Engineering, Warsaw University of TechnologyWarsaw, Poland
Recherchez cet auteur sur
Sciendo|Google Scholar
Chodun, Rafał
, 
Katarzyna Nowakowska-Langier

Katarzyna Nowakowska-Langier

National Centre for Nuclear Research (NCBJ)Otwock-Swierk, Poland
Recherchez cet auteur sur
Sciendo|Google Scholar
Nowakowska-Langier, Katarzyna
 et 
Krzysztof Zdunek

Krzysztof Zdunek

  • Faculty of Materials Science and Engineering, Warsaw University of TechnologyWarsaw, Poland
  • National Centre for Nuclear Research (NCBJ)Otwock-Swierk, Poland
Recherchez cet auteur sur
Sciendo|Google Scholar
Zdunek, Krzysztof
  
08 sept. 2016
Titanium nitride coatings synthesized by IPD method with eliminated current oscillations's Cover Image
À propos de cet article
Article précédent
Article suivant
Citez
Télécharger la couverture
Catégorie d'article: Research Article
Publié en ligne: 08 sept. 2016
Pages: 523 - 528
Reçu: 01 sept. 2015
Accepté: 31 mai 2016
DOI: https://doi.org/10.1515/msp-2016-0074
Mots clés
© 2016 Rafał Chodun et al., published by Sciendo
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Fig. 1

Schematic diagram of the IPD device equipped with diodes bank.
Schematic diagram of the IPD device equipped with diodes bank.

Fig. 2

Current waveforms measured in the plasma accelerator electric circuit equipped with diodes bank (lower graph) and without the diodes bank (upper graph).
Current waveforms measured in the plasma accelerator electric circuit equipped with diodes bank (lower graph) and without the diodes bank (upper graph).

Fig. 3

SEM images presenting structures of TiN coatings deposited by processes with diodes bank connected to accelerator circuit (B) and without it (A).
SEM images presenting structures of TiN coatings deposited by processes with diodes bank connected to accelerator circuit (B) and without it (A).

Fig. 4

X-ray diffraction patterns for the films obtained in the standard version of apparatus (A) and in apparatus equipped with diodes bank (B).
X-ray diffraction patterns for the films obtained in the standard version of apparatus (A) and in apparatus equipped with diodes bank (B).

Fig. 5

The indicator of the edge blunting (VBC) as a function of machining time for three types of inserts.
The indicator of the edge blunting (VBC) as a function of machining time for three types of inserts.
Langue:
Anglais
Périodicité:
4 fois par an
Sujets de la revue:
Sciences des matériaux, Sciences des matériaux, autres, Nanomatériaux, Matériaux fonctionnels et intelligents, Caractérisation et propriétés des matériaux
RSS Feed de la revue