Open Access

Titanium nitride coatings synthesized by IPD method with eliminated current oscillations

Rafał Chodun

Rafał Chodun

Faculty of Materials Science and Engineering, Warsaw University of TechnologyWarsaw, Poland
Search for this author on
Sciendo|Google Scholar
Chodun, Rafał
, 
Katarzyna Nowakowska-Langier

Katarzyna Nowakowska-Langier

National Centre for Nuclear Research (NCBJ)Otwock-Swierk, Poland
Search for this author on
Sciendo|Google Scholar
Nowakowska-Langier, Katarzyna
 and 
Krzysztof Zdunek

Krzysztof Zdunek

  • Faculty of Materials Science and Engineering, Warsaw University of TechnologyWarsaw, Poland
  • National Centre for Nuclear Research (NCBJ)Otwock-Swierk, Poland
Search for this author on
Sciendo|Google Scholar
Zdunek, Krzysztof
  
Sep 08, 2016
Titanium nitride coatings synthesized by IPD method with eliminated current oscillations's Cover Image
About this article
Previous Article
Next Article
Cite
Download Cover
Article Category: Research Article
Published Online: Sep 08, 2016
Page range: 523 - 528
Received: Sep 01, 2015
Accepted: May 31, 2016
DOI: https://doi.org/10.1515/msp-2016-0074
Keywords
© 2016 Rafał Chodun et al., published by Sciendo
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Fig. 1

Schematic diagram of the IPD device equipped with diodes bank.
Schematic diagram of the IPD device equipped with diodes bank.

Fig. 2

Current waveforms measured in the plasma accelerator electric circuit equipped with diodes bank (lower graph) and without the diodes bank (upper graph).
Current waveforms measured in the plasma accelerator electric circuit equipped with diodes bank (lower graph) and without the diodes bank (upper graph).

Fig. 3

SEM images presenting structures of TiN coatings deposited by processes with diodes bank connected to accelerator circuit (B) and without it (A).
SEM images presenting structures of TiN coatings deposited by processes with diodes bank connected to accelerator circuit (B) and without it (A).

Fig. 4

X-ray diffraction patterns for the films obtained in the standard version of apparatus (A) and in apparatus equipped with diodes bank (B).
X-ray diffraction patterns for the films obtained in the standard version of apparatus (A) and in apparatus equipped with diodes bank (B).

Fig. 5

The indicator of the edge blunting (VBC) as a function of machining time for three types of inserts.
The indicator of the edge blunting (VBC) as a function of machining time for three types of inserts.
Language:
English
Publication timeframe:
4 times per year
Journal Subjects:
Materials Sciences, Materials Sciences, other, Nanomaterials, Functional and Smart Materials, Materials Characterization and Properties
Journal RSS Feed