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The bandgap energy of the dilute bismuth GaBixSb1−x alloy depending on temperature

Chuan-Zhen Zhao

Chuan-Zhen Zhao

Tianjin Key Laboratory of Optoelectronic Detection Technology and Systems, School of Electronics and Information Engineering, Tiangong UniversityTianjin, China
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Zhao, Chuan-Zhen
 e 
Xue-Lian Qi

Xue-Lian Qi

Tianjin Key Laboratory of Optoelectronic Detection Technology and Systems, School of Electronics and Information Engineering, Tiangong UniversityTianjin, China
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Qi, Xue-Lian
  
16 dic 2021
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Pubblicato online: 16 dic 2021
Pagine: 298 - 304
Ricevuto: 07 giu 2021
Accettato: 29 set 2021
DOI: https://doi.org/10.2478/msp-2021-0025
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© 2021 Chuan-Zhen Zhao et al., published by Sciendo
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.
Zhao, Chuan-Zhen
Tianjin Key Laboratory of Optoelectronic Detection Technology and Systems, School of Electronics and Information Engineering, Tiangong UniversityTianjin, China
Qi, Xue-Lian
Tianjin Key Laboratory of Optoelectronic Detection Technology and Systems, School of Electronics and Information Engineering, Tiangong UniversityTianjin, China
Lingua:
Inglese
Frequenza di pubblicazione:
4 volte all'anno
Argomenti della rivista:
Scienze materiali, Scienze materiali, altro, Nanomateriali, Materiali funzionali ed intelligenti, Caratteristica e proprietà dei materiali
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