Accesso libero

The bandgap energy of the dilute bismuth GaBixSb1−x alloy depending on temperature

Chuan-Zhen Zhao

Chuan-Zhen Zhao

Tianjin Key Laboratory of Optoelectronic Detection Technology and Systems, School of Electronics and Information Engineering, Tiangong UniversityTianjin, China
Cerca questo autore su
Sciendo|Google Scholar
Zhao, Chuan-Zhen
 e 
Xue-Lian Qi

Xue-Lian Qi

Tianjin Key Laboratory of Optoelectronic Detection Technology and Systems, School of Electronics and Information Engineering, Tiangong UniversityTianjin, China
Cerca questo autore su
Sciendo|Google Scholar
Qi, Xue-Lian
  
16 dic 2021
The bandgap energy of the dilute bismuth GaBixSb1−x alloy depending on temperature's Cover Image
INFORMAZIONI SU QUESTO ARTICOLO
Articolo precedente
Articolo Successivo
Cita
Scarica la copertina
Pubblicato online: 16 dic 2021
Pagine: 298 - 304
Ricevuto: 07 giu 2021
Accettato: 29 set 2021
DOI: https://doi.org/10.2478/msp-2021-0025
Parole chiave
© 2021 Chuan-Zhen Zhao et al., published by Sciendo
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Fig. 1

Dependence of the bandgap energy of GaBixSb1−x on temperature. The experimental values are from Kopaczek et al. [10].
Dependence of the bandgap energy of GaBixSb1−x on temperature. The experimental values are from Kopaczek et al. [10].

Fig. 2

The bandgap shift of the GaBixSb1−x alloys when the temperature is changed from 15 K to 290 K.
The bandgap shift of the GaBixSb1−x alloys when the temperature is changed from 15 K to 290 K.

The parameters obtained in Eq_ (2)_

Bi fraction x γ (meV/K) Eg(0) (eV) σ (meV)
0 0.57 0.813 0
0.007 0.57 0.783 8.6
0.021 0.57 0.741 8.7
0.042 0.57 0.686 25.3
Lingua:
Inglese
Frequenza di pubblicazione:
4 volte all'anno
Argomenti della rivista:
Scienze materiali, Scienze materiali, altro, Nanomateriali, Materiali funzionali ed intelligenti, Caratteristica e proprietà dei materiali
Feed RSS della rivista