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The bandgap energy of the dilute bismuth GaBixSb1−x alloy depending on temperature

Chuan-Zhen Zhao

Chuan-Zhen Zhao

Tianjin Key Laboratory of Optoelectronic Detection Technology and Systems, School of Electronics and Information Engineering, Tiangong UniversityTianjin, China
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Zhao, Chuan-Zhen
 et 
Xue-Lian Qi

Xue-Lian Qi

Tianjin Key Laboratory of Optoelectronic Detection Technology and Systems, School of Electronics and Information Engineering, Tiangong UniversityTianjin, China
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Qi, Xue-Lian
  
16 déc. 2021
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Publié en ligne: 16 déc. 2021
Pages: 298 - 304
Reçu: 07 juin 2021
Accepté: 29 sept. 2021
DOI: https://doi.org/10.2478/msp-2021-0025
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© 2021 Chuan-Zhen Zhao et al., published by Sciendo
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Fig. 1

Dependence of the bandgap energy of GaBixSb1−x on temperature. The experimental values are from Kopaczek et al. [10].
Dependence of the bandgap energy of GaBixSb1−x on temperature. The experimental values are from Kopaczek et al. [10].

Fig. 2

The bandgap shift of the GaBixSb1−x alloys when the temperature is changed from 15 K to 290 K.
The bandgap shift of the GaBixSb1−x alloys when the temperature is changed from 15 K to 290 K.

The parameters obtained in Eq_ (2)_

Bi fraction x γ (meV/K) Eg(0) (eV) σ (meV)
0 0.57 0.813 0
0.007 0.57 0.783 8.6
0.021 0.57 0.741 8.7
0.042 0.57 0.686 25.3
Langue:
Anglais
Périodicité:
4 fois par an
Sujets de la revue:
Sciences des matériaux, Sciences des matériaux, autres, Nanomatériaux, Matériaux fonctionnels et intelligents, Caractérisation et propriétés des matériaux
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