<abstract xmlns="http://www.w3.org/1999/xhtml"><p>In this paper, the electrical performance of double gate DG-MOSFET transistors in 4H-SiC and 6H-SiC technologies have been studied by BSIM3v3 model. In which the <italic>I</italic>–<italic>V</italic> and <italic>g</italic><sub>m</sub>–<italic>V</italic> characteristics and subthreshold operation of the DGMOSFET have been investigated for two models (series and parallel) based on equivalent electronic circuits and the results so obtained are compared with the single gate SG-MOSFET, using 130 nm technology and OrCAD PSpice software. The electrical characterization of DG-MOSFETs transistors have shown that they operate under a low voltage less than 1.2 V and low power for both models like the SG-MOSFET transistor, especially the series DG-MOSFET transistor is characterized by an ultra low power. The different transistors are characterized by an ultra low OFF leakage current of pA order, very high ON/OFF ratio of and high subthreshold slope of order 0.1 V/dec for the transistors in 6H-SiC and 4H-SiC respectively. These transistors also proved higher transconductance efficiency, especially the parallel DG-MOSFET transistor.</p></abstract>

In this paper, the electrical performance of double gate DG-MOSFET transistors in 4H-SiC and 6H-SiC technologies have been studied by BSIM3v3 model. In which the I–V and gm–V characteristics and subthreshold operation of the DGMOSFET have been investigated for two models (series and parallel) based on equivalent electronic circuits and the results so obtained are compared with the single gate SG-MOSFET, using 130 nm technology and OrCAD PSpice software. The electrical characterization of DG-MOSFETs transistors have shown that they operate under a low voltage less than 1.2 V and low power for both models like the SG-MOSFET transistor, especially the series DG-MOSFET transistor is characterized by an ultra low power. The different transistors are characterized by an ultra low OFF leakage current of pA order, very high ON/OFF ratio of and high subthreshold slope of order 0.1 V/dec for the transistors in 6H-SiC and 4H-SiC respectively. These transistors also proved higher transconductance efficiency, especially the parallel DG-MOSFET transistor.

A high electrical performance of DG-MOSFET transistors in 4H-SiC and 6H-SiC 130 nm technology by BSIM3v3 model

Department of Networking and Telecommunications

Journal of Electrical Engineering

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.

In this paper, the electrical performance of double gate DG-MOSFET transistors in 4H-SiC and 6H-SiC technologies have been studied by BSIM3v3 model. In which...

A high electrical performance of DG-MOSFET transistors in 4H-SiC and 6H-SiC 130 nm technology by BSIM3v3 model

Online veröffentlicht: 13. Mai 2019

Seitenbereich: 145 - 151

Eingereicht: 08. Juli 2018

DOI: https://doi.org/10.2478/jee-2019-0021

Schlüsselwörter
4H-SiC, 6H-SiC, BSIM3v3, DG-MOSFET, nm technology, 4 − characteristics, subthreshold operation

© 2019 Mourad Hebali et al., published by Sciendo

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.

A high electrical performance of DG-MOSFET transistors in 4H-SiC and 6H-SiC 130 nm technology by BSIM3v3 model

Online veröffentlicht: 13. Mai 2019

Seitenbereich: 145 - 151

Eingereicht: 08. Juli 2018

DOI: https://doi.org/10.2478/jee-2019-0021

Schlüsselwörter4H-SiC, 6H-SiC, BSIM3v3, DG-MOSFET, nm technology, 4 − characteristics, subthreshold operation

© 2019 Mourad Hebali et al., published by Sciendo

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.

Schlüsselwörter
4H-SiC, 6H-SiC, BSIM3v3, DG-MOSFET, nm technology, 4 − characteristics, subthreshold operation