Login
Register
Reset Password
Publish & Distribute
Publishing Solutions
Distribution Solutions
Subjects
Architecture and Design
Arts
Business and Economics
Chemistry
Classical and Ancient Near Eastern Studies
Computer Sciences
Cultural Studies
Engineering
General Interest
Geosciences
History
Industrial Chemistry
Jewish Studies
Law
Library and Information Science, Book Studies
Life Sciences
Linguistics and Semiotics
Literary Studies
Materials Sciences
Mathematics
Medicine
Music
Pharmacy
Philosophy
Physics
Social Sciences
Sports and Recreation
Theology and Religion
Publications
Journals
Books
Proceedings
Publishers
Blog
Contact
Search
EUR
USD
GBP
English
English
Deutsch
Polski
Español
Français
Italiano
Cart
Home
Journals
Journal of Electrical Engineering
Volume 70 (2019): Issue 2 (April 2019)
Open Access
A high electrical performance of DG-MOSFET transistors in 4H-SiC and 6H-SiC 130 nm technology by BSIM3v3 model
Mourad Hebali
Mourad Hebali
,
Menaouer Bennaoum
Menaouer Bennaoum
,
Mohammed Berka
Mohammed Berka
,
Abdelkader Baghdad Bey
Abdelkader Baghdad Bey
,
Mohammed Benzohra
Mohammed Benzohra
,
Djilali Chalabi
Djilali Chalabi
and
Abdelkader Saidane
Abdelkader Saidane
| May 13, 2019
Journal of Electrical Engineering
Volume 70 (2019): Issue 2 (April 2019)
About this article
Previous Article
Next Article
Abstract
References
Authors
Articles in this Issue
Preview
PDF
Cite
Share
Published Online:
May 13, 2019
Page range:
145 - 151
Received:
Jul 08, 2018
DOI:
https://doi.org/10.2478/jee-2019-0021
Keywords
4H-SiC
,
6H-SiC
,
BSIM3v3
,
DG-MOSFET
,
nm technology
,
4 − characteristics
,
subthreshold operation
© 2019 Mourad Hebali et al., published by Sciendo
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.
Mourad Hebali
Department of Electrotechnical, University Mustapha Stambouli Mascara
Mascara, Algeria
Laboratory: CaSiCCe,
Oran, Algeria
Menaouer Bennaoum
Department of Electrotechnical, University Mustapha Stambouli Mascara
Mascara, Algeria
Laboratoire de matriaux appliqus (AML), Universit Djillali Liabs
Sidi Bel-Abbes, Algeria
Mohammed Berka
Department of Electrotechnical, University Mustapha Stambouli Mascara
Mascara, Algeria
Laboratory E.P.O, University of Sidi Bel-Abbes
Sidi Bel-Abbes, Algeria
Abdelkader Baghdad Bey
Department of Electrotechnical, University Mustapha Stambouli Mascara
Mascara, Algeria
Laboratory AMEL, University of Sidi Bel-Abbes
Sidi Bel-Abbes, Algeria
Mohammed Benzohra
Department of Networking and Telecommunications, University of Rouen, Laboratory LECAP
France
Djilali Chalabi
Laboratory: CaSiCCe,
Oran, Algeria
Abdelkader Saidane
Laboratory: CaSiCCe,
Oran, Algeria