<abstract xmlns="http://www.w3.org/1999/xhtml"><p>The diffusion phenomenon occurring between copper and indium was investigated by molecular dynamics simulations. The calculations were carried out in various temperatures in aging domain with the use of the commercially available Materials Studio v.6. software. The results showed that the intermetallic compound (IMC) growth followed the parabolic law, which indicated this growth to be mainly controlled by volume diffusion. The growth activation energy was estimated at 7.48 kJ · mol<sup>-1</sup>. </p></abstract>

The diffusion phenomenon occurring between copper and indium was investigated by molecular dynamics simulations. The calculations were carried out in various temperatures in aging domain with the use of the commercially available Materials Studio v.6. software. The results showed that the intermetallic compound (IMC) growth followed the parabolic law, which indicated this growth to be mainly controlled by volume diffusion. The growth activation energy was estimated at 7.48 kJ · mol-1.

Growth of intermetallic compound between indium-based thermal interface material and copper substrate: molecular dynamics simulations

Wroclaw University of Technology, Faculty of Microsystem Electronics and Photonics, 11/17 Janiszewskiego St., 50-372 Wroclaw, Poland

Materials Science-Poland

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

The diffusion phenomenon occurring between copper and indium was investigated by molecular dynamics simulations. The calculations were carried out in various...

Growth of intermetallic compound between indium-based thermal interface material and copper substrate: molecular dynamics simulations

Published Online: Jul 11, 2015

Page range: 445 - 450

Received: Jan 30, 2014

Accepted: Feb 27, 2015

DOI: https://doi.org/10.1515/msp-2015-0054

© 2015

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.