Study on etching anisotropy of Si(hkl) planes in solutions with different KOH and isopropyl alcohol concentrations

Data publikacji: 08 maj 2012

Zakres stron: 278 - 284

DOI: https://doi.org/10.2478/s13536-011-0047-z

Słowa kluczowe

anisotropic etching, silicon surface, potassium hydroxide, isopropanol concentration, (hkl) planes

© 2011 Wroclaw University of Technology

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.