Electrical performance estimation and comparative study of heterojunction strained and conventional gate all around nanosheet field effect transistors

Data publikacji: 14 gru 2023

Zakres stron: 503 - 512

Otrzymano: 02 paź 2023

DOI: https://doi.org/10.2478/jee-2023-0058

Słowa kluczowe

nanosheet, heterojunction GAA NS FET, conventional GAA NS FET, density gradient, on-state, off-state

© 2023 Reza Abbasnezhad et al., published by Sciendo

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.