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A novel temperature controller for in-situ measurement of radiation-induced changes in temperature effects on space electronics


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The paper discusses a novel temperature controller and a related test method allowing in-situ measurement of total ionising dose-induced changes in the impact of temperature on electronic devices for space applications. Various results of pilot radiation experiments (testing commercial PMOS transistors, RADFETs, and voltage references) are also presented.

eISSN:
1339-309X
Język:
Angielski
Częstotliwość wydawania:
6 razy w roku
Dziedziny czasopisma:
Engineering, Introductions and Overviews, other