A novel temperature controller for in-situ measurement of radiation-induced changes in temperature effects on space electronics
et | 18 juil. 2019
À propos de cet article
Publié en ligne: 18 juil. 2019
Pages: 227 - 235
Reçu: 02 mars 2019
DOI: https://doi.org/10.2478/jee-2019-0031
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© 2019 Jiri Haze et al., published by Sciendo
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.
The paper discusses a novel temperature controller and a related test method allowing in-situ measurement of total ionising dose-induced changes in the impact of temperature on electronic devices for space applications. Various results of pilot radiation experiments (testing commercial PMOS transistors, RADFETs, and voltage references) are also presented.