Germanium Gradient Optimization for High-Speed Silicon Germanium Hetero-Junction Bipolar Transistors
, oraz
21 sty 2020
O artykule
Data publikacji: 21 sty 2020
Zakres stron: 22 - 32
Otrzymano: 29 wrz 2019
Przyjęty: 27 lis 2019
DOI: https://doi.org/10.2478/awutp-2019-0002
Słowa kluczowe
© 2019 Abdelkader Khadir et al., published by Sciendo
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.
Khadir, Abdelkader
Laboratory of metallic and semiconducting materials, University of BiskraBiskra, Algeria
Materials Science and Informatics Laboratory, University of DjelfaDjelfa, Algeria
Sengouga, Nouredine
Laboratory of metallic and semiconducting materials, University of BiskraBiskra, Algeria
Abdelhafidi, Mohamed Kamel
Laboratory of metallic and semiconducting materials, University of BiskraBiskra, Algeria
Materials Science and Informatics Laboratory, University of DjelfaDjelfa, Algeria