Germanium Gradient Optimization for High-Speed Silicon Germanium Hetero-Junction Bipolar Transistors
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21. Jan. 2020
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Online veröffentlicht: 21. Jan. 2020
Seitenbereich: 22 - 32
Eingereicht: 29. Sept. 2019
Akzeptiert: 27. Nov. 2019
DOI: https://doi.org/10.2478/awutp-2019-0002
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© 2019 Abdelkader Khadir et al., published by Sciendo
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.
Khadir, Abdelkader
Laboratory of metallic and semiconducting materials, University of BiskraBiskra, Algeria
Materials Science and Informatics Laboratory, University of DjelfaDjelfa, Algeria
Sengouga, Nouredine
Laboratory of metallic and semiconducting materials, University of BiskraBiskra, Algeria
Abdelhafidi, Mohamed Kamel
Laboratory of metallic and semiconducting materials, University of BiskraBiskra, Algeria
Materials Science and Informatics Laboratory, University of DjelfaDjelfa, Algeria