<abstract xmlns="http://www.w3.org/1999/xhtml">The cobalt phthalocyanine (CoPc) thin films (300 nm thick) deposited on n-type silicon substrate have been studied using micro-Raman spectroscopy, atomic force spectroscopy (AFM) and I-V measurement. The CoPc thin layers have been deposited at room temperature by the quasi-molecular beam evaporation technique. The micro-Raman spectra of CoPc thin films have been recorded in the spectral range of 1000 cm-1 to 1900 cm-1 using 488 nm excitation wavelength. Moreover, using surface Raman mapping it was possible to obtain information about polymorphic forms distribution (before and after annealing) of metallophthalocyanine (α and β form) from polarized Raman spectra. The I-V characteristics of the Au/CoPc/n-Si/Al Schottky barrier were also investigated. The obtained results showed that influence of the annealing process plays a crucial role in the ordering and electrical conductivity of the molecular structure of CoPc thin films deposited on n-type silicon substrate.</abstract>

The cobalt phthalocyanine (CoPc) thin films (300 nm thick) deposited on n-type silicon substrate have been studied using micro-Raman spectroscopy, atomic force spectroscopy (AFM) and I-V measurement. The CoPc thin layers have been deposited at room temperature by the quasi-molecular beam evaporation technique. The micro-Raman spectra of CoPc thin films have been recorded in the spectral range of 1000 cm-1 to 1900 cm-1 using 488 nm excitation wavelength. Moreover, using surface Raman mapping it was possible to obtain information about polymorphic forms distribution (before and after annealing) of metallophthalocyanine (α and β form) from polarized Raman spectra. The I-V characteristics of the Au/CoPc/n-Si/Al Schottky barrier were also investigated. The obtained results showed that influence of the annealing process plays a crucial role in the ordering and electrical conductivity of the molecular structure of CoPc thin films deposited on n-type silicon substrate.

Effect of annealing temperature on optical and electrical properties of metallophthalocyanine thin films deposited on silicon substrate

University of Technology and Life Sciences

Materials Science-Poland

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

The cobalt phthalocyanine (CoPc) thin films (300 nm thick) deposited on n-type silicon substrate have been studied using micro-Raman spectroscopy, atomic force...

[nm]	Grain size	Ra	RMS	Avg. height	Max. height	Avg./Max.
before annealing	71.37±14.65	4.99	6.37	13.01	53.40	0.244
after annealing	83.97±7.97	14.50	20.80	32.40	186.70	0.174

Au/CoPc/n-Si/Al	Series resistance of the structure [Ω]	Potential barrier [eV]
before annealing	5200	0.79
after annealing	30600	0.83

Effect of annealing temperature on optical and electrical properties of metallophthalocyanine thin films deposited on silicon substrate

Article Category: Research Article

Data publikacji: 28 wrz 2016

Zakres stron: 676 - 683

Otrzymano: 22 lut 2016

Przyjęty: 09 lip 2016

DOI: https://doi.org/10.1515/msp-2016-0086

Słowa kluczowe
copper phthalocyanine, Raman spectroscopy, molecular orientation, atomic force microscopy, heat treatment

© 2016 R. Skonieczny et al., published by Sciendo

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Fig. 1

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The surface parameters obtained from AFM images for CoPc thin film before and after annealing process.

Electrical parameters obtained from I-V characteristic for CoPc structure, measured at room temperature in dark.

Effect of annealing temperature on optical and electrical properties of metallophthalocyanine thin films deposited on silicon substrate

Article Category: Research Article

Data publikacji: 28 wrz 2016

Zakres stron: 676 - 683

Otrzymano: 22 lut 2016

Przyjęty: 09 lip 2016

DOI: https://doi.org/10.1515/msp-2016-0086

Słowa kluczowecopper phthalocyanine, Raman spectroscopy, molecular orientation, atomic force microscopy, heat treatment

© 2016 R. Skonieczny et al., published by Sciendo

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Fig. 1

Fig. 2

Fig. 3

Fig. 4

Fig. 5

Fig. 6

Fig. 7

The surface parameters obtained from AFM images for CoPc thin film before and after annealing process.

Electrical parameters obtained from I-V characteristic for CoPc structure, measured at room temperature in dark.

Słowa kluczowe
copper phthalocyanine, Raman spectroscopy, molecular orientation, atomic force microscopy, heat treatment