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Effect of annealing temperature on optical and electrical properties of metallophthalocyanine thin films deposited on silicon substrate

R. Skonieczny

R. Skonieczny

Faculty of Technical Physics, Poznan University of TechnologyPoznan, Poland
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Skonieczny, R.
, 
P. Popielarski

P. Popielarski

Institute of Physics, Kazimierz Wielki UniversityBydgoszcz, Poland
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Popielarski, P.
, 
W. Bała

W. Bała

Faculty of Technical Physics, Poznan University of TechnologyPoznan, Poland
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Bała, W.
, 
K. Fabisiak

K. Fabisiak

Institute of Physics, Kazimierz Wielki UniversityBydgoszcz, Poland
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Fabisiak, K.
, 
K. Paprocki

K. Paprocki

Institute of Physics, Kazimierz Wielki UniversityBydgoszcz, Poland
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Paprocki, K.
, 
M. Jancelewicz

M. Jancelewicz

Nanobiomedical Center, Adam Mickiewicz UniversityPoznan, Poland
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Jancelewicz, M.
, 
M. Kowalska

M. Kowalska

Faculty of Chemical Technology and Engineering, University of Technology and Life SciencesBydgoszcz, Poland
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Kowalska, M.
 e 
M. Szybowicz

M. Szybowicz

Faculty of Technical Physics, Poznan University of TechnologyPoznan, Poland
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Szybowicz, M.
  
28 set 2016
Effect of annealing temperature on optical and electrical properties of metallophthalocyanine thin films deposited on silicon substrate's Cover Image
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Categoria dell'articolo: Research Article
Pubblicato online: 28 set 2016
Pagine: 676 - 683
Ricevuto: 22 feb 2016
Accettato: 09 lug 2016
DOI: https://doi.org/10.1515/msp-2016-0086
Parole chiave
© 2016 R. Skonieczny et al., published by Sciendo
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Fig. 1

Polarized Raman spectra (VV and VH) for CoPc thin layer deposited on Si substrate.
Polarized Raman spectra (VV and VH) for CoPc thin layer deposited on Si substrate.

Fig. 2

Orientation of CoPc molecules (angle between molecule and substrate) obtained from Raman measurements (a) before and (b) after annealing process for 300 nm thick CoPc film.
Orientation of CoPc molecules (angle between molecule and substrate) obtained from Raman measurements (a) before and (b) after annealing process for 300 nm thick CoPc film.

Fig. 3

Distribution of the molecular forms for CoPc thin layer obtained from Raman measurements before (black) and after (red) annealing.
Distribution of the molecular forms for CoPc thin layer obtained from Raman measurements before (black) and after (red) annealing.

Fig. 4

AFM images for CoPc thin layer obtained for a) before and b) after annealing process.
AFM images for CoPc thin layer obtained for a) before and b) after annealing process.

Fig. 5

Current-voltage characteristics (I-V) for CoPc thin layers before annealing; inset in Fig. 5 shows the electrical diagram.
Current-voltage characteristics (I-V) for CoPc thin layers before annealing; inset in Fig. 5 shows the electrical diagram.

Fig. 6

Current-voltage characteristics (I-V) for CoPc thin layers before and after annealing process at the temperature of 473 K for 6 hours in air; the inset in Fig. 6 shows the electrical diagram.
Current-voltage characteristics (I-V) for CoPc thin layers before and after annealing process at the temperature of 473 K for 6 hours in air; the inset in Fig. 6 shows the electrical diagram.

Fig. 7

Plots of junction resistance, Rj, against applied voltage at room temperature for Au/CoPc/n-Si/Al structure annealed at temperature of 473 K for 6 hours in air.
Plots of junction resistance, Rj, against applied voltage at room temperature for Au/CoPc/n-Si/Al structure annealed at temperature of 473 K for 6 hours in air.

The surface parameters obtained from AFM images for CoPc thin film before and after annealing process_

[nm]Grain sizeRaRMSAvg. heightMax. heightAvg./Max.
before annealing71.37±14.654.996.3713.0153.400.244
after annealing83.97±7.9714.5020.8032.40186.700.174

Electrical parameters obtained from I-V characteristic for CoPc structure, measured at room temperature in dark_

Au/CoPc/n-Si/AlSeries resistance of the structure [Ω]Potential barrier [eV]
before annealing52000.79
after annealing306000.83
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