<abstract xmlns="http://www.w3.org/1999/xhtml">Patterning of metal oxide nanostructures with different shapes and well-defined size may play an important role in the improvement of MEMS systems, sensors and optical devices. We investigated the effects of HSQ e-beam resist processing on the fabrication of sputtered TiO2 nanostructures. They were patterned using direct write e-beam lithography combined with ICP-RIE etching in CF4/Ar plasma. Experimental results confirmed that the HSQ resist with a thickness of about 600 nm is suitable as a masking material for optimal etching process and allows patterning of the dots array in TiO2 sputtered films with a thickness up 150 nm. TiO2 arrays with a minimal dots diameter of 180 nm and spacing of 1000 nm were successfully developed.</abstract>

Patterning of metal oxide nanostructures with different shapes and well-defined size may play an important role in the improvement of MEMS systems, sensors and optical devices. We investigated the effects of HSQ e-beam resist processing on the fabrication of sputtered TiO2 nanostructures. They were patterned using direct write e-beam lithography combined with ICP-RIE etching in CF4/Ar plasma. Experimental results confirmed that the HSQ resist with a thickness of about 600 nm is suitable as a masking material for optimal etching process and allows patterning of the dots array in TiO2 sputtered films with a thickness up 150 nm. TiO2 arrays with a minimal dots diameter of 180 nm and spacing of 1000 nm were successfully developed.

Effects of HSQ e–beam Resist Processing on the Fabrication of ICP–RIE Etched TiO2 Nanostructures

Institute of Electronics and Photonics, Slovak University of Technology, Ilkovičova 3, 812 19 Bratislava,

Institute of Informatics, Slovak Academy of Sciences, Dúbravská cesta 9, 845 07 Bratislava,

Journal of Electrical Engineering

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

Effects of HSQ e–beam Resist Processing on the Fabrication of ICP–RIE Etched TiO Nanostructures

Patterning of metal oxide nanostructures with different shapes and well-defined size may play an important role in the improvement of MEMS systems, sensors and...

Effects of HSQ e–beam Resist Processing on the Fabrication of ICP–RIE Etched TiO₂ Nanostructures

Data publikacji: 30 gru 2016

Zakres stron: 454 - 458

Otrzymano: 07 lip 2016

DOI: https://doi.org/10.1515/jee-2016-0067

Słowa kluczowe
HSQ e-beam resist, ICP-RIE etching, TiO dots array

© 2016 Faculty of Electrical Engineering and Information Technology, Slovak University of Technology

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

Effects of HSQ e–beam Resist Processing on the Fabrication of ICP–RIE Etched TiO2 Nanostructures

Data publikacji: 30 gru 2016

Zakres stron: 454 - 458

Otrzymano: 07 lip 2016

DOI: https://doi.org/10.1515/jee-2016-0067

Słowa kluczoweHSQ e-beam resist, ICP-RIE etching, TiO dots array

© 2016 Faculty of Electrical Engineering and Information Technology, Slovak University of Technology

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

Effects of HSQ e–beam Resist Processing on the Fabrication of ICP–RIE Etched TiO₂ Nanostructures

Słowa kluczowe
HSQ e-beam resist, ICP-RIE etching, TiO dots array