Annealing effect on the structural and optoelectronic properties of Cu-Cr-O thin films deposited by reactive magnetron sputtering using a single CuCr target
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25 ago 2023
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Pubblicato online: 25 ago 2023
Pagine: 191 - 201
Ricevuto: 15 mag 2023
Accettato: 13 lug 2023
DOI: https://doi.org/10.2478/msp-2023-0017
Parole chiave
© 2023 Du-Cheng Tsai et al., published by Sciendo
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.
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The elemental composition of Cu-Cr-O films as a function of annealing temperature
Annealing temperature (°C) | Cu (at.%) | Cr (at.%) | O(at.%) | Cu/Cr ratio |
---|---|---|---|---|
As-deposited | 28.41 | 14.05 | 57.54 | 2.02 |
500 | 31.69 | 15.95 | 52.36 | 1.99 |
600 | 31.20 | 16.24 | 52.55 | 1.92 |
700 | 31.23 | 15.68 | 53.09 | 1.99 |
800 | 31.81 | 15.68 | 52.51 | 2.03 |
The carrier concentration, Hall mobility, and electrical resistivity of Cu-Cr-O films as a function of annealing temperature
Annealing temperature (°C) | Carrier concentration (×1017 cm−3) | Hall Mobility (cm2/V-s) | Electrical resistivity (Ω-cm) |
---|---|---|---|
500 | 2.81 | 0.121 | 183 |
600 | 4.05 | 0.373 | 41 |
700 | 3.25 | 0.223 | 86 |
800 | 0.43 | 0.268 | 540 |