<abstract xmlns="http://www.w3.org/1999/xhtml">

The aim of this study is to explore the structural and optoelectronic properties of Cu-Cr-O thin films when processed by the magnetron sputtering method using a single equimolar CuCr alloy target. These films were then post-annealed in a controlled Ar atmosphere at 500°C to 800°C for 2 h. The as-deposited Cu-Cr-O thin film consisted of an amorphous phase and exhibited extremely poor optoelectronic properties. After annealing was conducted at 500°C, monoclinic CuO and spinel CuCr2O4 phases were simultaneously formed in the film. Upon increasing the annealing temperature to 600°C, the CuCr2O4 phase reacted completely with the CuO phase and transformed into the delafossite CuCrO2 phase, possessing optimal optoelectronic performance. It has an electrical resistivity of 41 Ω-cm and a light transmittance of 49.5%, making it suitable for p-type transparent conducting electrodes. A further increase in annealing temperature resulted in larger grains and greater surface roughness and void density, which, in turn, degraded the optoelectronic performance.
</abstract>

The aim of this study is to explore the structural and optoelectronic properties of Cu-Cr-O thin films when processed by the magnetron sputtering method using a single equimolar CuCr alloy target. These films were then post-annealed in a controlled Ar atmosphere at 500°C to 800°C for 2 h. The as-deposited Cu-Cr-O thin film consisted of an amorphous phase and exhibited extremely poor optoelectronic properties. After annealing was conducted at 500°C, monoclinic CuO and spinel CuCr2O4 phases were simultaneously formed in the film. Upon increasing the annealing temperature to 600°C, the CuCr2O4 phase reacted completely with the CuO phase and transformed into the delafossite CuCrO2 phase, possessing optimal optoelectronic performance. It has an electrical resistivity of 41 Ω-cm and a light transmittance of 49.5%, making it suitable for p-type transparent conducting electrodes. A further increase in annealing temperature resulted in larger grains and greater surface roughness and void density, which, in turn, degraded the optoelectronic performance.

Annealing effect on the structural and optoelectronic properties of Cu-Cr-O thin films deposited by reactive magnetron sputtering using a single CuCr target

Materials Science-Poland

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

The aim of this study is to explore the structural and optoelectronic properties of Cu-Cr-O thin films when processed by the magnetron sputtering method using...

Annealing temperature (°C)	Cu (at.%)	Cr (at.%)	O(at.%)	Cu/Cr ratio
As-deposited	28.41	14.05	57.54	2.02
500	31.69	15.95	52.36	1.99
600	31.20	16.24	52.55	1.92
700	31.23	15.68	53.09	1.99
800	31.81	15.68	52.51	2.03

Annealing temperature (°C)	Carrier concentration (×10¹⁷ cm⁻³)	Hall Mobility (cm²/V-s)	Electrical resistivity (Ω-cm)
500	2.81	0.121	183
600	4.05	0.373	41
700	3.25	0.223	86
800	0.43	0.268	540

Annealing effect on the structural and optoelectronic properties of Cu-Cr-O thin films deposited by reactive magnetron sputtering using a single CuCr target

Online veröffentlicht: 25. Aug. 2023

Seitenbereich: 191 - 201

Eingereicht: 15. Mai 2023

Akzeptiert: 13. Juli 2023

DOI: https://doi.org/10.2478/msp-2023-0017

Schlüsselwörter
Transparent conducting oxide, copper chromium oxide, annealing temperature, optoelectronic properties

© 2023 Du-Cheng Tsai et al., published by Sciendo

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Fig. 1.

Fig. 2.

Fig. 3.

Fig. 4.

Fig. 5.

Fig. 6.

The elemental composition of Cu-Cr-O films as a function of annealing temperature

The carrier concentration, Hall mobility, and electrical resistivity of Cu-Cr-O films as a function of annealing temperature

Annealing effect on the structural and optoelectronic properties of Cu-Cr-O thin films deposited by reactive magnetron sputtering using a single CuCr target

Online veröffentlicht: 25. Aug. 2023

Seitenbereich: 191 - 201

Eingereicht: 15. Mai 2023

Akzeptiert: 13. Juli 2023

DOI: https://doi.org/10.2478/msp-2023-0017

SchlüsselwörterTransparent conducting oxide, copper chromium oxide, annealing temperature, optoelectronic properties

© 2023 Du-Cheng Tsai et al., published by Sciendo

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Fig. 1.

Fig. 2.

Fig. 3.

Fig. 4.

Fig. 5.

Fig. 6.

The elemental composition of Cu-Cr-O films as a function of annealing temperature

The carrier concentration, Hall mobility, and electrical resistivity of Cu-Cr-O films as a function of annealing temperature

Schlüsselwörter
Transparent conducting oxide, copper chromium oxide, annealing temperature, optoelectronic properties