<abstract xmlns="http://www.w3.org/1999/xhtml"><p>This work presents the investigations of AlN thin films deposited on Si substrates by means of magnetron sputtering. Nine different sputtering processes were performed. Based on obtained results, the tenth process was prepared and performed (for future ISFET structures manufacturing). Round aluminum (Al) electrodes were evaporated on the top of deposited layers. The MIS capacitor structures enabled a subsequent electrical characterization of the AlN films by means of current-voltage (I-V) and capacitance-voltage (C-V) measurements. Based on these results, the main parameters of investigated layers were obtained. Moreover, the paper describes the technology of fabrication and electrical characterization of ISFET transistors and possibility of their application as ion sensors.</p></abstract>

This work presents the investigations of AlN thin films deposited on Si substrates by means of magnetron sputtering. Nine different sputtering processes were performed. Based on obtained results, the tenth process was prepared and performed (for future ISFET structures manufacturing). Round aluminum (Al) electrodes were evaporated on the top of deposited layers. The MIS capacitor structures enabled a subsequent electrical characterization of the AlN films by means of current-voltage (I-V) and capacitance-voltage (C-V) measurements. Based on these results, the main parameters of investigated layers were obtained. Moreover, the paper describes the technology of fabrication and electrical characterization of ISFET transistors and possibility of their application as ion sensors.

Properties of AlN thin films deposited by means of magnetron sputtering for ISFET applications

Materials Science-Poland

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

This work presents the investigations of AlN thin films deposited on Si substrates by means of magnetron sputtering. Nine different sputtering processes were...

Properties of AlN thin films deposited by means of magnetron sputtering for ISFET applications

Pubblicato online: 06 gen 2016

Pagine: 669 - 676

Ricevuto: 13 gen 2014

Accettato: 16 giu 2015

DOI: https://doi.org/10.1515/msp-2015-0095

Parole chiave
ISFET/MISFET technology, AlN, aluminum nitride, magnetron sputtering

© 2015 Piotr Firek et al., published by De Gruyter Open

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

Properties of AlN thin films deposited by means of magnetron sputtering for ISFET applications

Pubblicato online: 06 gen 2016

Pagine: 669 - 676

Ricevuto: 13 gen 2014

Accettato: 16 giu 2015

DOI: https://doi.org/10.1515/msp-2015-0095

Parole chiaveISFET/MISFET technology, AlN, aluminum nitride, magnetron sputtering

© 2015 Piotr Firek et al., published by De Gruyter Open

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

Parole chiave
ISFET/MISFET technology, AlN, aluminum nitride, magnetron sputtering