<abstract xmlns="http://www.w3.org/1999/xhtml"><p>The Hi/Lo bilayer resist system exposure in e-beam lithography (EBL) process, intended for mushroom-like profile fabrication, was studied. Different exposure parameters and theirs influence on the resist layers were simulated in CASINO software and the obtained results were compared with the experimental data. The AFM technique was used for the estimation of the e-beam penetration depth in the resist stack. Performed numerical and experimental results allow us to establish the useful ranges of the exposure parameters.</p></abstract>

The Hi/Lo bilayer resist system exposure in e-beam lithography (EBL) process, intended for mushroom-like profile fabrication, was studied. Different exposure parameters and theirs influence on the resist layers were simulated in CASINO software and the obtained results were compared with the experimental data. The AFM technique was used for the estimation of the e-beam penetration depth in the resist stack. Performed numerical and experimental results allow us to establish the useful ranges of the exposure parameters.

Electron Beam Lithography Double Step Exposure Technique for Fabrication of Mushroom-Like Profile in Bilayer Resist System

Faculty of Microsystem Electronics and Photonics, Wroclaw University of Technology, 27 Wybrzeze Wyspiańskiego Str., 50-370 Wroclaw, Poland

Journal of Electrical Engineering

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

The Hi/Lo bilayer resist system exposure in e-beam lithography (EBL) process, intended for mushroom-like profile fabrication, was studied. Different exposure...

Electron Beam Lithography Double Step Exposure Technique for Fabrication of Mushroom-Like Profile in Bilayer Resist System

Publié en ligne: 31 janv. 2015

Pages: 381 - 385

Reçu: 15 juin 2014

DOI: https://doi.org/10.2478/jee-2014-0062

© 2015 Faculty of Electrical Engineering and Information Technology, Slovak University of Technology

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.