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Device Application of Non-Equilibrium MOS Capacitors Fabricated on High Resistivity Silicon

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O. Malik
Electronics DepartmentINAOE, Puebla, Mexico
F. J. De la Hidalga-W
Electronics DepartmentINAOE, Puebla, Mexico
eISSN:
1178-5608
Langue:
Anglais
Périodicité:
Volume Open
Sujets de la revue:
Engineering, Introductions and Overviews, other