<abstract xml:lang="en" xmlns="http://www.w3.org/1999/xhtml"><p>Pulsed magnetron sputtering of metal targets in the presence of reactive gas is widely used to deposit compound materials. This method is very popular but still the aim of research is to obtain more stable and efficient processes. The standard procedure of compound thin film deposition is sputtering in so called reactive mode of magnetron work — sputtering of the target surface covered with the formed compound. The authors postulate that the problem of low deposition rate of reactive compounds can be solved if the magnetron source operates in the metallic mode or near the border of metallic and transient mode. Aluminium oxide thin films were deposited using high effective reactive pulsed magnetron sputtering. The main purpose of the research was electrical characterization of metal-compound-metal structures in the wide range of frequencies and determination of deposition technique influence on the thin film properties.</p></abstract>

Pulsed magnetron sputtering of metal targets in the presence of reactive gas is widely used to deposit compound materials. This method is very popular but still the aim of research is to obtain more stable and efficient processes. The standard procedure of compound thin film deposition is sputtering in so called reactive mode of magnetron work — sputtering of the target surface covered with the formed compound. The authors postulate that the problem of low deposition rate of reactive compounds can be solved if the magnetron source operates in the metallic mode or near the border of metallic and transient mode. Aluminium oxide thin films were deposited using high effective reactive pulsed magnetron sputtering. The main purpose of the research was electrical characterization of metal-compound-metal structures in the wide range of frequencies and determination of deposition technique influence on the thin film properties.

Properties of aluminium oxide thin films deposited in high effective reactive pulsed magnetron sputtering process

Faculty of Microsystem Electronics and Photonics, Wrocław University of Technology, Janiszewskiego 11/17, 50-372, Wrocław, Poland

Materials Science-Poland

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

Pulsed magnetron sputtering of metal targets in the presence of reactive gas is widely used to deposit compound materials. This method is very popular but...

Properties of aluminium oxide thin films deposited in high effective reactive pulsed magnetron sputtering process

Publicado en línea: 14 dic 2012

Páginas: 323 - 328

DOI: https://doi.org/10.2478/s13536-012-0058-4

Palabras clave
impedance spectroscopy, aluminium oxide, reactive magnetron sputtering

© 2012 Wroclaw University of Technology

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

Properties of aluminium oxide thin films deposited in high effective reactive pulsed magnetron sputtering process

Publicado en línea: 14 dic 2012

Páginas: 323 - 328

DOI: https://doi.org/10.2478/s13536-012-0058-4

Palabras claveimpedance spectroscopy, aluminium oxide, reactive magnetron sputtering

© 2012 Wroclaw University of Technology

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

Palabras clave
impedance spectroscopy, aluminium oxide, reactive magnetron sputtering