1. bookVolume 37 (2019): Issue 3 (September 2019)
Journal Details
License
Format
Journal
eISSN
2083-134X
First Published
16 Apr 2011
Publication timeframe
4 times per year
Languages
English
access type Open Access

Investigation, analysis and comparison of current-voltage characteristics for Au/Ni/GaN Schottky structure using I-V-T simulation

Published Online: 18 Oct 2019
Volume & Issue: Volume 37 (2019) - Issue 3 (September 2019)
Page range: 496 - 502
Received: 05 Jan 2019
Accepted: 25 Apr 2019
Journal Details
License
Format
Journal
eISSN
2083-134X
First Published
16 Apr 2011
Publication timeframe
4 times per year
Languages
English
Abstract

In this work, we have presented a theoretical study of Au/Ni/GaN Schottky diode based on current-voltage (I-V) measurement for temperature range of 120 K to 400 K. The electrical parameters of Au/Ni/GaN, such as barrier height (Φb), ideality factor and series resistance have been calculated employing the conventional current-voltage (I-V), Cheung and Chattopadhyay method. Also, the variation of Gaussian distribution (P (Φb)) as a function of barrier height (Φb) has been studied. Therefore, the modified ((ln(I0T2)(q2σs022kT2)=ln(AA*)qB0kT)vs.(1kT))( {( {\ln \left( {{{{\rm{I}}_0 } \over {{\rm{T}}^2 }}} \right) - \left( {{{{\rm{q}}^2 \sigma _{{\rm{s}}0}^2 } \over {2{\rm{kT}}^2 }}} \right) = \ln ( {{\rm{AA}}^*} ) - {{{\rm{q}}\emptyset_{{\rm B}0} } \over {{\rm{kT}}}}} ){\rm{vs}}.( {{1 \over {{\rm{kT}}}}} )} ) relation has been extracted from (I-V) characteristics, where the values of ΦB0 and ASimul*{\rm{A}}_{{\rm{Simul}}}^* have been found in different temperature ranges. The obtained results have been compared to the existing experimental data and a good agreement was found.

Keywords

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