Time-dependent gate breakdown reliability and gate leakage improvements in p-GaN MOS-HEMTs using Al2O3 gate dielectric

Program on Semiconductor Manufacturing Technology, Academy of Innovative Semiconductor and Sustainable Manufacturing, National Cheng Kung UniversityTainan City, Taiwan

Chang, Sheng-Po

Department of Microelectronics Engineering, National Kaohsiung University of Science and TechnologyKaohsiung City 81157, Taiwan

Chang, Shoou-Jinn

Institute of Microelectronics & Department of Electrical Engineering, National Cheng Kung UniversityTainan City, Taiwan

Język:: Angielski

Częstotliwość wydawania:: 4 razy w roku
Dziedziny czasopisma:: Nauka o materiałach, Nauka o materiałach, inne, Nanomateriały, Funkcjonalne i inteligentne materiały, Charakterystyka i właściwości materiałów

Kanał RSS czasopisma

Time-dependent gate breakdown reliability and gate leakage improvements in p-GaN MOS-HEMTs using Al2O3 gate dielectric

Tsung-I Liao

Sheng-Po Chang

Shoou-Jinn Chang

Kategoria artykułu: Research Article

Data publikacji: 30 cze 2025

Zakres stron: 143 - 152

Otrzymano: 11 cze 2025

Przyjęty: 04 sie 2025

DOI: https://doi.org/10.2478/msp-2025-0025

Słowa kluczoweEnhancement-mode, -GaN gate MOS-HEMT, Transfer length method, Post-deposition annealing

© 2025 Tsung-I Liao, published by Sciendo

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Time-dependent gate breakdown reliability and gate leakage improvements in p-GaN MOS-HEMTs using Al₂O₃ gate dielectric

Słowa kluczowe
Enhancement-mode, -GaN gate MOS-HEMT, Transfer length method, Post-deposition annealing