Time-dependent gate breakdown reliability and gate leakage improvements in p-GaN MOS-HEMTs using Al2O3 gate dielectric

Program on Semiconductor Manufacturing Technology, Academy of Innovative Semiconductor and Sustainable Manufacturing, National Cheng Kung UniversityTainan City, Taiwan

Chang, Sheng-Po

Department of Microelectronics Engineering, National Kaohsiung University of Science and TechnologyKaohsiung City 81157, Taiwan

Chang, Shoou-Jinn

Institute of Microelectronics & Department of Electrical Engineering, National Cheng Kung UniversityTainan City, Taiwan

Langue:: Anglais

Périodicité:: 4 fois par an
Sujets de la revue:: Sciences des matériaux, Sciences des matériaux, autres, Nanomatériaux, Matériaux fonctionnels et intelligents, Caractérisation et propriétés des matériaux

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Time-dependent gate breakdown reliability and gate leakage improvements in p-GaN MOS-HEMTs using Al2O3 gate dielectric

Tsung-I Liao

Sheng-Po Chang

Shoou-Jinn Chang

Catégorie d'article: Research Article

Publié en ligne: 30 juin 2025

Pages: 143 - 152

Reçu: 11 juin 2025

Accepté: 04 août 2025

DOI: https://doi.org/10.2478/msp-2025-0025

Mots clésEnhancement-mode, -GaN gate MOS-HEMT, Transfer length method, Post-deposition annealing

© 2025 Tsung-I Liao, published by Sciendo

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Time-dependent gate breakdown reliability and gate leakage improvements in p-GaN MOS-HEMTs using Al₂O₃ gate dielectric

Mots clés
Enhancement-mode, -GaN gate MOS-HEMT, Transfer length method, Post-deposition annealing