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Defect-minimized directly grown graphene-based solar cells

Yiqian Cui

Yiqian Cui

Hebei Key Laboratory of Optic-electronic Information and Materials, National-Local Joint Engineering Laboratory of New Energy Photoelectric Devices, College of Physics Science and Technology, Hebei UniversityBaoding, China
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Cui, Yiqian
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Jiaqi Wei

Jiaqi Wei

Hebei Key Laboratory of Optic-electronic Information and Materials, National-Local Joint Engineering Laboratory of New Energy Photoelectric Devices, College of Physics Science and Technology, Hebei UniversityBaoding, China
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Wei, Jiaqi
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Lizhe Jia

Lizhe Jia

Hebei Key Laboratory of Optic-electronic Information and Materials, National-Local Joint Engineering Laboratory of New Energy Photoelectric Devices, College of Physics Science and Technology, Hebei UniversityBaoding, China
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Jia, Lizhe
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Lukai Zhang

Lukai Zhang

Hebei Key Laboratory of Optic-electronic Information and Materials, National-Local Joint Engineering Laboratory of New Energy Photoelectric Devices, College of Physics Science and Technology, Hebei UniversityBaoding, China
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Zhang, Lukai
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Qing Zhou

Qing Zhou

Hebei Key Laboratory of Optic-electronic Information and Materials, National-Local Joint Engineering Laboratory of New Energy Photoelectric Devices, College of Physics Science and Technology, Hebei UniversityBaoding, China
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Zhou, Qing
, 
Yanliang Liu

Yanliang Liu

Hebei Key Laboratory of Optic-electronic Information and Materials, National-Local Joint Engineering Laboratory of New Energy Photoelectric Devices, College of Physics Science and Technology, Hebei UniversityBaoding, China
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Liu, Yanliang
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Yong Zhang

Yong Zhang

Hebei Key Laboratory of Optic-electronic Information and Materials, National-Local Joint Engineering Laboratory of New Energy Photoelectric Devices, College of Physics Science and Technology, Hebei UniversityBaoding, China
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Zhang, Yong
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Yu Zhang

Yu Zhang

Hebei Key Laboratory of Digital Medical Engineering, College of Electronic Information Engineering, Hebei UniversityBaoding, China
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Zhang, Yu
 oraz 
Wei Yu

Wei Yu

Hebei Key Laboratory of Optic-electronic Information and Materials, National-Local Joint Engineering Laboratory of New Energy Photoelectric Devices, College of Physics Science and Technology, Hebei UniversityBaoding, China
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Yu, Wei
  
31 gru 2022
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Data publikacji: 31 gru 2022
Zakres stron: 125 - 134
Otrzymano: 28 wrz 2022
Przyjęty: 22 gru 2022
DOI: https://doi.org/10.2478/msp-2022-0037
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© 2022 Yiqian Cui et al., published by Sciendo
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Fig. 1

The characterization is obtained when GNWs are grown at different growth temperatures and growth times. (A) Sheet resistance of the GNWs. (B) Raman spectra of the GNWs. (C) ID/IG ratio (blue curve) and I2D/IG ratio (red curve). (D–G) AFM image of the GNWs. (H) the efficiency distribution of the GNWs/Si solar cells. AFM, atomic force microscope; GNWs, growth graphene nanowalls
The characterization is obtained when GNWs are grown at different growth temperatures and growth times. (A) Sheet resistance of the GNWs. (B) Raman spectra of the GNWs. (C) ID/IG ratio (blue curve) and I2D/IG ratio (red curve). (D–G) AFM image of the GNWs. (H) the efficiency distribution of the GNWs/Si solar cells. AFM, atomic force microscope; GNWs, growth graphene nanowalls

Fig. 2

Comparison of photovoltaic characteristics and performance parameters under different growth temperatures and growth times of direct-grown GNWs on bare silicon. (A) Light J–V characteristics of GNWs/Si solar cells. (B) EQE spectra of GNWs/Si solar cells. (C) The extraction of series resistance by plotting dV/dJ vs. J−1 in forward bias region. (D) The extraction of ideality factor n and reverse saturation current density J0 by plotting log[J + (J–VRS)/RSH] vs. (V-JRS) near forward bias region
Comparison of photovoltaic characteristics and performance parameters under different growth temperatures and growth times of direct-grown GNWs on bare silicon. (A) Light J–V characteristics of GNWs/Si solar cells. (B) EQE spectra of GNWs/Si solar cells. (C) The extraction of series resistance by plotting dV/dJ vs. J−1 in forward bias region. (D) The extraction of ideality factor n and reverse saturation current density J0 by plotting log[J + (J–VRS)/RSH] vs. (V-JRS) near forward bias region

Fig. 3

SEM images of devices. (A) The cross-section of GNWs. (B) The cross-section of GNWs with PEDOT:Nafion coatings. (C) Device schematic to illustrate the structure of directly grown GNWs silicon Schottky junction solar cell after adding PEDOT: Nafion coating. GNWs, growth graphene nanowalls; SEM, scanning electron microscopy
SEM images of devices. (A) The cross-section of GNWs. (B) The cross-section of GNWs with PEDOT:Nafion coatings. (C) Device schematic to illustrate the structure of directly grown GNWs silicon Schottky junction solar cell after adding PEDOT: Nafion coating. GNWs, growth graphene nanowalls; SEM, scanning electron microscopy

Fig. 4

(A) Light J–V characteristics (B) and EQE characterization of solar cells with PEDOT:Nafion coating and pristine GNWs. Dark state measurements of the GNWs/Si solar cells with and without PEDOT:Nafion coatings. (C) The extraction of series resistance by plotting dV/dJ vs. J−1 in forward bias region. (D) The extraction of ideality factor n and reverse saturation current density J0 by plotting log[J + (J–VRS)/RSH] vs. (V–JRS) near forward bias region. EQE, external quantum efficiency; GNWs, growth graphene nanowalls
(A) Light J–V characteristics (B) and EQE characterization of solar cells with PEDOT:Nafion coating and pristine GNWs. Dark state measurements of the GNWs/Si solar cells with and without PEDOT:Nafion coatings. (C) The extraction of series resistance by plotting dV/dJ vs. J−1 in forward bias region. (D) The extraction of ideality factor n and reverse saturation current density J0 by plotting log[J + (J–VRS)/RSH] vs. (V–JRS) near forward bias region. EQE, external quantum efficiency; GNWs, growth graphene nanowalls

Fig. 5

(A) Transmittance and (B) reflection comparison of direct growth of GNWs and GNWs with PEDOT:Nafion coatings. (C) UPS results of GNWs with and without PEDOT:Nafion coatings. GNWs, growth graphene nanowalls; UPS, ultraviolet photoelectron spectroscopy
(A) Transmittance and (B) reflection comparison of direct growth of GNWs and GNWs with PEDOT:Nafion coatings. (C) UPS results of GNWs with and without PEDOT:Nafion coatings. GNWs, growth graphene nanowalls; UPS, ultraviolet photoelectron spectroscopy

Parameters and photovoltaic properties of GNWs/Si solar cells under different growth temperatures and growth times

Temperature (°C) – time (min) Voc (V) Jsc (mA/cm2) FF (%) PCE (%)
580 – 120 0.346 17.51 37.28 2.26
590 – 100 0.391 22.25 41.39 3.6
600 – 80 0.399 23.1 41.52 3.83
610 – 70 0.37 22.1 40.9 3.34

A comparison of the present results with those of previous studies

Device structure Active area (cm2) Sheet resistance (kΩ/sq) Voc (V) Jsc (mA/cm2) FF (%) PCE (%)
Gr-Uncertain silicon surface [15] 0.09 0.9 0.35 28 36 3.5
Gr-micropyramidal silicon [23] - 1.28 0.351 28.7 38 3.8
Gr-polished silicon [17] 0.3 0.8 0.4 21.99 34.79 3.5
Gr-polished silicon [7] 0.3 1.64 0.391 25.17 56.03 5.51
Gr-polished silicon [20] 0.9 3.38 0.395 18.91 42.7 3.19
Present work 0.45 1.3 0.399 23.1 41.52 3.83
Język:
Angielski
Częstotliwość wydawania:
4 razy w roku
Dziedziny czasopisma:
Nauka o materiałach, Nauka o materiałach, inne, Nanomateriały, Funkcjonalne i inteligentne materiały, Charakterystyka i właściwości materiałów
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