Pressure dependence of the band gap energy for dilute nitride and antimony GaNxSbyAs1−x−y
, , , oraz
06 paź 2020
O artykule
Data publikacji: 06 paź 2020
Zakres stron: 248 - 252
Otrzymano: 11 maj 2017
Przyjęty: 01 mar 2019
DOI: https://doi.org/10.2478/msp-2020-0028
Słowa kluczowe
© 2020 Chuan-Zhen Zhao et al., published by Sciendo
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.
Zhao, Chuan-Zhen
Tianjin Key Laboratory of Optoelectronic Detection Technology and Systems, School of Electronics and Information Engineering, Tianjin Polytechnics UniversityTianjin, China
Ren, He-Yu
Tianjin Key Laboratory of Optoelectronic Detection Technology and Systems, School of Electronics and Information Engineering, Tianjin Polytechnics UniversityTianjin, China
Sun, Xiao-Dong
Tianjin Key Laboratory of Optoelectronic Detection Technology and Systems, School of Electronics and Information Engineering, Tianjin Polytechnics UniversityTianjin, China
Wang, Sha-Sha
Tianjin Key Laboratory of Optoelectronic Detection Technology and Systems, School of Electronics and Information Engineering, Tianjin Polytechnics UniversityTianjin, China
Lu, Ke-Qing
Tianjin Key Laboratory of Optoelectronic Detection Technology and Systems, School of Electronics and Information Engineering, Tianjin Polytechnics UniversityTianjin, China