Pressure dependence of the band gap energy for dilute nitride and antimony GaNxSbyAs1−x−y
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06. Okt. 2020
Über diesen Artikel
Online veröffentlicht: 06. Okt. 2020
Seitenbereich: 248 - 252
Eingereicht: 11. Mai 2017
Akzeptiert: 01. März 2019
DOI: https://doi.org/10.2478/msp-2020-0028
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© 2020 Chuan-Zhen Zhao et al., published by Sciendo
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.
Zhao, Chuan-Zhen
Tianjin Key Laboratory of Optoelectronic Detection Technology and Systems, School of Electronics and Information Engineering, Tianjin Polytechnics UniversityTianjin, China
Ren, He-Yu
Tianjin Key Laboratory of Optoelectronic Detection Technology and Systems, School of Electronics and Information Engineering, Tianjin Polytechnics UniversityTianjin, China
Sun, Xiao-Dong
Tianjin Key Laboratory of Optoelectronic Detection Technology and Systems, School of Electronics and Information Engineering, Tianjin Polytechnics UniversityTianjin, China
Wang, Sha-Sha
Tianjin Key Laboratory of Optoelectronic Detection Technology and Systems, School of Electronics and Information Engineering, Tianjin Polytechnics UniversityTianjin, China
Lu, Ke-Qing
Tianjin Key Laboratory of Optoelectronic Detection Technology and Systems, School of Electronics and Information Engineering, Tianjin Polytechnics UniversityTianjin, China