Role of RF power on physical properties of RF magnetron sputtered GaN/p-Si(1 0 0) thin film

Data publikacji: 18 paź 2019

Zakres stron: 454 - 464

Otrzymano: 23 lip 2018

Przyjęty: 01 mar 2019

DOI: https://doi.org/10.2478/msp-2019-0052

Słowa kluczowe

RF magnetron sputtering, thin film, III-nitride, GaN, semiconductor

© 2019 Asim Mantarci et al., published by Sciendo

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.