Role of RF power on physical properties of RF magnetron sputtered GaN/p-Si(1 0 0) thin film

Publicado en línea: 18 oct 2019

Páginas: 454 - 464

Recibido: 23 jul 2018

Aceptado: 01 mar 2019

DOI: https://doi.org/10.2478/msp-2019-0052

Palabras clave

RF magnetron sputtering, thin film, III-nitride, GaN, semiconductor

© 2019 Asim Mantarci et al., published by Sciendo

This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.