Study on the suitability of ZnO thin film for dynamic pressure sensing application
, , , oraz
29 sty 2020
O artykule
Kategoria artykułu: Research-Article
Data publikacji: 29 sty 2020
Zakres stron: 1 - 9
Otrzymano: 17 gru 2018
DOI: https://doi.org/10.21307/ijssis-2020-002
Słowa kluczowe
© 2020 Suma M. N. et al., published by Sciendo
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.
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Structural details of ZnO thin film derived from XRD_
Sl. No. | Deposition duration (min) | 2θ (Deg) | FWHM (Deg) | Average grain size (nm) |
---|---|---|---|---|
1 | 15 | 33.950 | 0.796 | 10.905 |
2 | 30 | 33.890 | 0.684 | 12.694 |
3 | 45 | 33.890 | 0.601 | 14.435 |
4 | 60 | 34.014 | 0.517 | 16.777 |
Sputtering parameters used for deposition of ZnO thin film_
Target – substrate distance | 28 cm |
Substrate temperature | 24 ± 2oC |
RF power | 120 W |
Ar-O2 ratio | 17.1–3.1 Sccm (85%–15%) |
Ultimate pressure | 5 × 10−6 mbar |
Working pressure | 1.4 × 10−2 mbar |
Deposition time | 15, 30, 45, and 60 min |